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By Peter W. Hawkes (Ed.)
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Extra resources for Advances in Electronics and Electron Physics, Vol. 70
Of course, such an accurate treatment must include the influence of the external electronic circuit attached to the specimen. As - increasing bias voltagew E > I . 29. Two-dimensional voltage image of the hotspot boundaries indicated by the bright regions for a superconducting tin film. The narrow strip with the wide section at both ends is indicated by the black lines. The image shown at the top is obtained by detecting the backscattered electrons. Results are presented for different sample voltages as indicated on the right.
The base- and counterelectrode were typically 200 nm and 400 nm thick, respectively. The rectangular tunnel area was 9 pm x 20pm. The barrier consisted of a thin SiO layer. The three voltage images (a)-(c) in Fig. 20 were obtained at the corresponding bias points shown on the inset. The upper voltage image (a), recorded in the thermal tunneling regime and imaging the quasiparticle tunneling conductance, shows a distinct maximum in the middle of the junction. (The reduced local tunneling conductance along both counterelectrode edges is caused probably by the influence of the photoresist stencil, defining the pattern for the counter-electrode, on the local electric field distribution in the rf-plasma discharge for the fabrication of the barrier).
If the phase-difference function #(x, y) were to remain unaffected, the measured beam-induced change of the junction critical current as a function of the beam position yo would be given by m Y 0 ) = SJ,(YO) * 6Y * w sin #(Yo) (27) Here and in the following, for simplicity, we assume a one-dimensional geometry, restricting any spatial dependence to the y-direction and ignoring in-line geometry overlap geometry FIG. 12. In-line and overlap geometry. The barrier is indicated by the hatched part. 22 R.